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| NTE280 (NPN) & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: D High Power Dissipation: PC = 100W D Collector-Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -12A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current-Gain Bandwidth Product Output Capacitance Symbol Test Conditions Min 140 5 - - 40 - - - - Typ - - - - - - - 5 220 Max - - 100 100 140 3.0 2.5 - - V V MHz pF Unit V V A A V(BR)CEO IC = 100mA, IB = 0 V(BR)EBO IE = 10mA, IC = 0 ICBO IEBO hFE VCE(sat) VBE(on) fT Ccb VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 2A IC = 7A, IB = 700mA VCE = 5V, IC = 7A VCE = 5V, IC = 2A VCE = 10V, IE = 0, f = 1MHz Note 1. NTE280MP is a matched pair of NTE280 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. NTE281MCP is a matched complementary pair containing 1 each of NTE280 (NPN) and NTE281 (PNP). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE281
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